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Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

Identifieur interne : 009C02 ( Main/Exploration ); précédent : 009C01; suivant : 009C03

Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

Auteurs : I. Sychugov [Suède] ; J. Lu [Suède] ; N. Elfström [Suède] ; J. Linnros [Suède]

Source :

Journal of luminescence [ 0022-2313 ] ; 2006.

RBID : Pascal:07-0004288

Descripteurs français

Pascal (Inist)
- Formation image, Microscopie électronique transmission, Lithographie faisceau électron, Gravure plasma, Oxydation, Photoluminescence, Dispositif CCD, Technologie faisceau ion focalisé, Caractérisation, Méthode étude, Système couplé, Silicium, Point quantique, Nanocristal, Si, 8107B, 7867B.

English descriptors

KwdEn :
- Characterization, Charge coupled devices, Electron beam lithography, Focused ion beam technology, Imaging, Investigation method, Nanocrystal, Oxidation, Paired system, Photoluminescence, Plasma etching, Quantum dots, Silicon, Transmission electron microscopy.

Abstract

Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.

Affiliations:

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Le document en format XML

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<front><div type="abstract" xml:lang="en">Individual silicon quantum dots were fabricated by electron-beam lithography, plasma etching and a two-step oxidation process. This enables photoluminescence (PL) from individual dots at various temperatures to be detected and spectrally resolved using a sensitive charge-coupled device camera-imaging system, as reported previously. The regular array-like arrangement of oxidized pillars containing individual nanocrystals, in principle, enables combined transmission electron microscopy (TEM) and low-temperature PL characterization of the same Si quantum dot. To this end, a technique employing focused ion beam was developed for preparation of the pillar/nanocrystal of interest for TEM. It is shown that silicon quantum dots of several nanometers in size can be characterized using such a method.</div>
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Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

Structural imaging of a Si quantum dot : Towards combined PL and TEM characterization

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri